2sa1575 / 2sc4080 no.3171-1/4 features ? high f t . ? high breakdown voltage. ? small reverse transfer capacitance and excellent high-frequency characteristic. ? adoption of fbet process. specifications ( ) : 2sa1575 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)200 v collector-to-emitter voltage v ceo (--)200 v emitter-to-base voltage v ebo (--)4 v collector current i c (--)100 ma collector current (pulse) i cp (--)200 ma collector dissipation p c 500 mw mounted on a ceramic board (250mm 2 5 0.8mm) 1.3 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)150v, i e =0a (--)0.1 m a emitter cutoff current i ebo v eb =(--)2v, i c =0a (--)1.0 m a dc current gain h fe 1v ce =(--)10v, i c =(--)10ma 40* 320* h fe 2v ce =(--)10v, i c =(--)60ma 20 gain-bandwidth product f t v ce =(--)30v, i c =(--)30ma 400 mhz output capacitance cob v cb =(--)30v, f=1mhz (2.3)1.8 pf reverse transfer capacitance cre v cb =(--)30v, f=1mhz (1.7)1.4 pf marking : 2sa1575 : af / 2sc4080 : ci continued on next page. * : the 2sa1575 / 2sc4080 are classified by 10ma h fe as follows : rank c d e f h fe 40 to 80 60 to 120 100 to 200 160 to 320 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : en3171a 83006aa ms im tc-00000151 / 72098ha (kt) / 7139mo, ts any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. sanyo semiconductors data sheet 2sa1575 / 2sc4080 pnp / npn epitaxial planar silicon darlington transistors high-frequency amplifier, wide-band amplifier applications
2sa1575 / 2sc4080 no.3171-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit collector-to-emitter saturation voltage v ce (sat) i c =(--)20ma, i b =(--)2ma (--)1.0 v base-to-emitterr saturation voltage v be (sat) i c =(--)20ma, i b =(--)2ma (--)1.0 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 m a, i e =0a (--)200 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)200 v emitter-to-base breakdown voltage v (br)ebo i e =(--)100 m a, i c =0a (--)4 v package dimensions unit : mm (typ) 7007a-004 1 : base 2 : collector 3 : emitter sanyo : pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- ma collector-to-emitter voltage, v ce -- v collector current, i c -- ma itr03479 0 -- 4 -- 8 -- 12 -- 16 -- 20 0 -- 10 -- 20 -- 30 -- 40 -- 50 i b =0 m a itr03480 20 12 16 48 0 0 10 20 30 40 50 2sa1575 i b =0 m a 2sc4080 --500 m a --400 m a --350 m a --300 m a --250 m a --200 m a --150 m a --100 m a --50 m a --450 m a 500 m a 450 m a 400 m a 350 m a 300 m a 250 m a 200 m a 150 m a 100 m a 50 m a
2sa1575 / 2sc4080 no.3171-3/4 h fe -- i c collector current, i c -- ma dc current gain, h fe h fe -- i c collector current, i c -- ma dc current gain, h fe v ce (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v v ce (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma p c -- ta ambient temperature, ta -- c collector dissipation, p c -- w 100 10 itr03483 2 3 57 57 3 25 -- 10 72 -- 100 -- 1.0 2 3 5 7 7 2 3 5 1.0 3 57 7 23 5 10 5 27 100 2 7 10 5 100 7 5 3 2 3 2 itr03484 2sa1575 v ce = --10v 2sc4080 v ce =10v itr03481 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 2sa1575 v ce = --10v itr03482 0 0.2 0.4 0.6 0.8 1.0 1.2 0 40 20 60 80 100 120 2sc4080 v ce =10v itr03491 5 -- 10 22 -- 1.0 33 55 77 -- 100 7 -- 0.1 -- 1.0 5 3 5 7 7 2 2 2sa1575 i c / i b =1 0 itr03492 55 57 10 2 1.0 23 37 100 7 0.1 7 1.0 5 7 3 5 2 2 2sc4080 i c / i b = 10 1.4 1.2 1.3 1.0 0.8 0.6 0.2 0.4 0 020 60 40 80 100 120 140 160 itr07149 mounted on a ceramic board (250mm 2 5 0.8mm) 2sa1575 / 2sc4080
2sa1575 / 2sc4080 no.3171-4/4 ps specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of august, 2006. specifications and information herein are subject to change without notice.
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